Effect of time-modulation bias on polysilicon gate etching

Abstract The etching characteristics were studied via time-modulation bias (bias pulsing) by varying the pulsing parameters. etch profiles verified using polysilicon gate structures with dense and isolated patterns. Ion energy was defined as peak-to-peak voltage ( V pp ) controlled RF power. durations of on period off (off time) adjusted pulse frequency duty cycle. Profile evolution observed in variations time. Increasing ion induced vertical patterns tapered Extending time These results indicated that increasing simultaneously direction to achieve anisotropic for both